Planar cavity MEMS structures and related structures, fabrication processes, and design structures

摘要

A method of forming at least one cavity (60b) of a microelectromechanical system (MEMS) comprises forming a first cavity sacrificial layer (18) over a wiring layer (14) and a substrate (10). The method further comprises forming an insulator layer (40) over the first cavity sacrificial layer. The method further comprises performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first cavity sacrificial layer. The method further includes stripping or stripping the first sacrificial cavity layer to a planar surface for a first cavity (60b) of the MEMS.