A method for characterising of light - emitting semiconductor devices based on product wafter - characteristics

摘要

A method for characterising of light - emitting semiconductor devices (leds), based on product wafter - characteristics, are disclosed. The method include the measurement of at least one product wafter - charakteristikums, such as the curvature or device layer voltage. The method also comprises the setting up a relationship between the at least one characteristic and the emission wavelengths of the leds - chips or - this formed on the product wafter. The relationship makes it possible to predict the emission wavelength of the leds - structures formed in the device is similar to that of the layer of product wafers. This in turn can be used in order to characterize the product wafer and, in particular, the leds - structures formed thereon and in order to ensure a method control in the case of the leds - production with a large volume to carry out.