Hemt with an integrated diode with low forward bias

摘要

A high - electron - mobility - transistor (100) includes: a source electrode (s), a gate electrode (g) and a drain electrode (d), a first iii - v - semiconductor region with a two-dimensional electron gas (2deg), comprising a first conductive channel, of the of the gate electrode (g), can be controlled, between the source electrode (s) and the drain electrode (d), and a second iii - v - semiconductor region below the first iii - v - semiconductor region and with a second conductive channel, which is connected with the source electrode (s) or the drain electrode (d) is connected and not from the gate electrode (g) can be controlled. The first and second iii - v - semiconductor region, by means of a field of the high - electron - mobility - transistor (100) with a different band gap than the first and second iii - v - semiconductor region spaced apart from one another.