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HEMT with integrated low forward bias diode
HEMT with integrated low forward bias diode
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机译:集成低正向偏置二极管的HEMT
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摘要
A high electron mobility transistor includes a source, gate and drain, a first III-V semiconductor region having a two-dimensional electron gas (2DEG) which provides a first conductive channel controllable by the gate between the source and drain, and a second III-V semiconductor region below the first III-V semiconductor region and having a second conductive channel connected to the source or drain and not controllable by the gate. The first and second III-V semiconductor regions are spaced apart from one another by a region of the high electron mobility transistor having a different band gap than the first and second III-V semiconductor regions.
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