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Method for measuring angle-resolved intensity distribution in reticle plane of projection exposure system for microlithography with illumination system, involves arranging optical module in beam path of projection exposure system
Method for measuring angle-resolved intensity distribution in reticle plane of projection exposure system for microlithography with illumination system, involves arranging optical module in beam path of projection exposure system
The method involves arranging an optical module (42) in the beam path of a projection exposure system (10), and arranging a spatially resolving detection module (44) in the range of the field planes (24,30) such that the distance from the detection module to the field plane is lower than the closet pupil plane (20). The electro-magnetic radiation (21) is irradiated from the optical module by an illumination system (16). An angle-resolved intensity distribution of the incident radiation is detected from a signal recorded by the detection module. Independent claims are included for the following: (1) a method for measuring a beam divergence in an illumination system of a projection exposure system for the microlithography; and (2) a projection exposure system with a microlens arrangement.
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