Schottky barrier diode, method of forming the diode, and design structure for the diode

摘要

Embodiments of a Schottky barrier diode (100) are disclosed. This Schottky barrier diode may be formed in a semiconductor substrate (101) having a doped region (110) of a first conductivity type. A trench isolation structure (120) may laterally surround a portion (111) of the doped region at the top (102) of the substrate. On the upper side of the substrate, a semiconductor layer (150) may be arranged. This semiconductor layer may include a Schottky barrier portion (151) over the defined portion (111) of the doped region and a guard ring electrode portion (152) over the trench isolation structure laterally surrounding the Schottky barrier portion. The Schottky barrier portion may have the first conductivity type, and the guard ring electrode portion may have a second conductivity type different from the first conductivity type. Over the semiconductor layer may be a metal silicide layer (140). Also disclosed are embodiments of a method of forming this Schottky barrier diode and a Schottky barrier diode design structure.