Implementation of an expanded data - at least partial erasure for more level cells - or mlc - memory with the use of with respect to ties voltage drift or resistance drift more tolerant of memory data coding with a movable base line

摘要

A method and device for the implementation of an extended data part erasing for more level cells - or mlc - memory with the use of with respect to ties voltage drift or resistance drift more tolerant of memory data coding provided with movable base line. It is a data part for erasing in the mlc - memory written data with the use of with respect to ties voltage drift or resistance drift more tolerant of memory data coding with a movable base line is carried out and a data rewriting according to the at least partial erasure of the mlc - memory with the use of with respect to ties voltage drift or resistance drift more tolerant of memory data coding is carried out with a movable base line. A data part extinguishing cycle comprises a duration and a voltage level on the basis of a deterioration of the mlc - memory cells.