ENHANCED DATA PARTIAL-ERASURE IMPLEMENT OF A MULTI-LEVEL CELL (MLC) MEMORY BY USING THRESHOLD VOLTAGE DRIFT OR RESISTANCE DRIFT TOLERANT MOVING BASELINE MEMORY DATA ENCODING

摘要

PURPOSE: Enhanced data partial-erasure implement of an MLC memory by using threshold voltage drift or resistance drift tolerant moving baseline memory data encoding is provided to extend the lifetime of a storage device by reducing the total erasure of cells.;CONSTITUTION: A device for implementing data partial erasure for an MLC memory includes a controller (106).The controller performs a data partial erasure process for data written in the MLC memory by using threshold voltage drift or resistance drift tolerant moving baseline memory data encoding. The controller performs a data re-write process for the MLC memory after the partial erasure process by using the threshold voltage drift or resistance drift tolerant moving baseline memory data encoding.;COPYRIGHT KIPO 2013;[Reference numerals] (102) Solid state drive; (104) Host computer; (106) Controller CPU; (108) Main memory (DRAM); (110) MLC memory management information and control block; (112) Moving baseline memory data encoding control block; (114) MLC memory (flash chip, PCM chip); (116) Host interface