Transistor i.e. hot-carrier-injection metal-oxide-semiconductor transistor, for e.g. integrated circuit of contact smartcard, has gate including non-planar surface having non-zero component part in direction perpendicular to substrate

摘要

The transistor (20) has source and drain regions in a substrate (21), and a floating gate (24) made of a conducting material and located above the substrate in an isolated manner. The gate includes a non-planar surface having a part with a non-zero component in a direction perpendicular to the substrate. The gate includes a branch directed along direction perpendicular to the substrate. The gate is separated from the substrate by an insulating element i.e. tunnel (27), and separated from a control gate (25) by an insulating layer (29). Independent claims are also included for the following: (1) an electrically programmable non-volatile memory (2) a method for manufacturing a transistor (3) a method for manufacturing an electrically programmable non-volatile memory.