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METHOD OF CORRECTING DEFECT OF PHOTOMASK, PHOTOMASK PRODUCTION METHOD AND PHOTOMASK

机译:校正光掩膜缺陷的方法,光掩膜产生方法和光掩膜

摘要

PROBLEM TO BE SOLVED: To provide a convenient method of correcting deletion defects of a quartz substrate of a photomask which achieves a phase effect and a transmission factor of a corrected part nearly equal to those of normal parts of the quartz substrate, a photomask production method including the correction method and a photomask.;SOLUTION: A method of correcting defects of a photomask is for correcting deletion defect parts of a quartz substrate of a photomask which is formed with a specified pattern on the quartz substrate and includes a step of depositing an electron beam CVD film in the deletion defect parts to fill the deletion defect parts and a step of grinding the deposited electron beam CVD film by using a probe of an atomic force microscope to reduce irregularities of the surface of the CVD film to 5 nm or smaller.;COPYRIGHT: (C)2014,JPO&INPIT
机译:要解决的问题:为了提供一种方便的方法来校正光掩模的石英基板的缺失缺陷,该方法实现了相位效应,并且校正后的部分的透射率几乎等于石英基板的正常部分的相移和透射率,一种光掩模制造方法解决方案:一种用于校正光掩模缺陷的方法是用于校正在石英衬底上形成有指定图案的光掩模的石英衬底的缺失缺陷部分。缺陷缺损部分中的电子束CVD膜以填充缺陷缺损部分,以及通过使用原子力显微镜的探针研磨沉积的电子束CVD膜以将CVD膜表面的不规则度减小至5nm或更小的步骤。;版权:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2014174243A

    专利类型

  • 公开/公告日2014-09-22

    原文格式PDF

  • 申请/专利权人 DAINIPPON PRINTING CO LTD;

    申请/专利号JP20130044975

  • 发明设计人 NISHIGUCHI MASAHARU;

    申请日2013-03-07

  • 分类号G03F1/72;G01Q80/00;

  • 国家 JP

  • 入库时间 2022-08-21 16:19:46

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