NITRIDE-BASED SEMICONDUCTOR EPITAXIAL WAFER AND NITRIDE-BASED FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To suppress occurrence of current collapse.;SOLUTION: A nitride-based semiconductor epitaxial wafer comprises: a substrate; a nucleation layer formed on the substrate and composed of aluminum nitride; a buffer layer formed on the nucleation layer and composed of gallium nitride; and a barrier layer formed on the buffer layer and composed of aluminum gallium nitride. The total concentration of silicon concentration and oxygen concentration in the barrier layer is higher than carbon concentration in the barrier layer.;COPYRIGHT: (C)2014,JPO&INPIT