首页> 外国专利> ZINC OXIDE-BASED SINTERED BODY, PRODUCTION METHOD THEREOF, SPUTTERING TARGET AND TRANSPARENT CONDUCTIVE FILM

ZINC OXIDE-BASED SINTERED BODY, PRODUCTION METHOD THEREOF, SPUTTERING TARGET AND TRANSPARENT CONDUCTIVE FILM

机译:氧化锌基烧结体,其制备方法,溅射靶标和透明导电膜

摘要

PROBLEM TO BE SOLVED: To provide a zinc oxide-based sintered body, its production method, etc. which suppress occurrence of abnormal discharge, or arcing, in producing a transparent conductive film of high resistivity applicable to e.g. a buffer layer of CIGS type solar batteries by sputtering.;SOLUTION: A zinc oxide-based sintered body contains 0.01-1 mass%, based on oxides, of at least one added element selected from Mg, Al, Ti, Ga, In and Sn and 20-200 mass ppm of Si element; the crystal grain sizes of zinc oxide in the sintered body are 25-100 μm; Si element is present in the sintered body in the form of Si-containing crystal grains of grain sizes of 5 μm or smaller; and the Si-containing crystal grains are not deposited in the crystal grain boundary of zinc oxide in the sintered body. A method of producing the sintered body uses, as a Si element supply source, a silicon compound which has a siloxane structure and is liquid at room temperature, and the sintering temperature for the molding is set in the range of 900-1,400°C.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供一种氧化锌类烧结体,其制造方法等,其在制造适用于例如玻璃的高电阻率的透明导电膜时,抑制异常放电或电弧的发生。溶液:基于氧化锌的烧结体包含0.01-1质量%(基于氧化物)的至少一种选自Mg,Al,Ti,Ga,In和Sn和20-200质量ppm的Si元素;烧结体中氧化锌的晶粒尺寸为25-100μm。 Si元素以5μm以下的含Si晶粒的形式存在于烧结体中。并且,在烧结体中,在氧化锌的晶界中不析出含Si晶粒。烧结体的制造方法使用具有硅氧烷结构且在室温下为液体的硅化合物作为Si元素供给源,将成型的烧结温度设定为900〜1400℃的范围。 ;版权:(C)2014,日本特许厅&INPIT

著录项

  • 公开/公告号JP2014181155A

    专利类型

  • 公开/公告日2014-09-29

    原文格式PDF

  • 申请/专利权人 SUMITOMO METAL MINING CO LTD;

    申请/专利号JP20130056769

  • 发明设计人 KUBOUCHI YUTA;

    申请日2013-03-19

  • 分类号C04B35/453;C23C14/34;

  • 国家 JP

  • 入库时间 2022-08-21 16:19:08

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