SILICON CARBIDE DIODE, SILICON CARBIDE TRANSISTOR, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide diode which can be reduced in contact resistance between a p-type region and an electrode, and to provide a silicon carbide transistor and a method of manufacturing a silicon carbide semiconductor device.;SOLUTION: The method of manufacturing a silicon carbide semiconductor device 1 comprises the following steps of: preparing a silicon carbide substrate 10 including a p-type region 2a and an n-type region 14 being in contact with the p-type region 2a; heating the p-type region 2a in an atmospheric gas containing a halogen element to form a carbon region 6 being in contact with the p-type region 2a; forming a first metal layer 5 being in contact with the carbon region 6; and heating the carbon region 6 and the first metal layer 5 to form an electrode 8 being in contact with the p-type region 2a.;COPYRIGHT: (C)2014,JPO&INPIT