BLANKS FOR EUVL MASK AND MANUFACTURING METHOD THEREOF, EUVL MASK AND UPDATING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an EUVL mask capable of reducing positional displacement and dimensional displacement of a pattern caused by influences of a foreign substance or a flaw by removing contamination on a rear surface of the EUVL mask caused by an electrostatic chuck in exposure to be performed iteratively, after the exposure and an updating method thereof, as well as blanks for the EUVL mask therefor and a manufacturing method thereof.;SOLUTION: The EUVL mask comprises: a multilayer reflection film 22 formed on a front face of a substrate 21; a protection film 23 formed thereon; an absorption film 24 formed thereon for absorbing exposure light; and a rear-side multilayer conductive film 25 formed from a multilayer film on a rear face of the substrate 21. The rear-side multilayer conductive film 25 is formed by laminating two or more kinds of materials A, B with different etching resistances. A top layer surface of the rear-side multilayer conductive film 25 which is contaminated by a foreign substance or damaged during EUV exposure, is removed and updated by etching.;COPYRIGHT: (C)2014,JPO&INPIT