首页> 外国专利> SPUTTERING TARGET MATERIAL FOR HEAT SINK LAYER FORMATION OF HEAT-ASSISTED MAGNETIC RECORDING MEDIUM

SPUTTERING TARGET MATERIAL FOR HEAT SINK LAYER FORMATION OF HEAT-ASSISTED MAGNETIC RECORDING MEDIUM

机译:热辅助磁记录介质热沉层形成的溅射靶材

摘要

PROBLEM TO BE SOLVED: To provide a sputtering target material for forming a heat sink layer of a heat-assisted magnetic recording medium with a sputtering method, which demands a high thermal conductivity and a smooth surface.;SOLUTION: This invention is a sputtering target material for a heat sink layer formation of a heat-assisted magnetic recording medium. In the sputtering target material, a compositional formula in an atom ratio is represented by Cu100-x-y-Zrx-Cry, 0.10≤x≤5.00, 0.10≤y≤1.00, and the remainder is made of inevitable impurities.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供一种用于通过溅射法形成热辅助磁记录介质的散热层的溅射靶材,该溅射靶材需要高导热率和平滑的表面。用于形成热辅助磁记录介质的散热器层的材料。在溅射靶材中,以Cu 100-xy -Zr x -Cr y 表示的原子比的组成式为0.10≤ x≤5.00,0.10≤y≤1.00,其余部分由不可避免的杂质制成。;版权:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2014053065A

    专利类型

  • 公开/公告日2014-03-20

    原文格式PDF

  • 申请/专利权人 HITACHI METALS LTD;

    申请/专利号JP20130011761

  • 申请日2013-01-25

  • 分类号G11B5/84;G11B5/738;

  • 国家 JP

  • 入库时间 2022-08-21 16:18:57

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