首页> 外国专利> NITRIDE POLYCRYSTAL OF GROUP 13 METAL IN PERIODIC TABLE, AND PRODUCTION METHOD OF NITRIDE SINGLE CRYSTAL OF GROUP 13 METAL IN PERIODIC TABLE BY USING THE SAME

NITRIDE POLYCRYSTAL OF GROUP 13 METAL IN PERIODIC TABLE, AND PRODUCTION METHOD OF NITRIDE SINGLE CRYSTAL OF GROUP 13 METAL IN PERIODIC TABLE BY USING THE SAME

机译:周期表中第13族金属的氮化物及使用该方法生产周期表中第13族金属的氮化物单晶

摘要

PROBLEM TO BE SOLVED: To provide a production method of a nitride single crystal capable of heightening raw material utilization efficiency by improving a growth rate, and producing efficiently a nitride crystal having excellent conductivity without contamination of an unnecessary impurities, in production of the nitride single crystal by an ammonothermal method.;SOLUTION: A nitride polycrystal of a group 13 metal in the periodic table in which the average pore diameter in a pore volume standard is 8 μm or more and 50 μm or less, and further the pore volume is 0.1×10-3 ml/g or more and 0.1 ml/g or less is filled into a reaction vessel as a raw material, and a nitride single crystal of the group 13 metal in the periodic table is grown in the presence of a solvent in the supercritical and/or subcritical state in the reaction vessel.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的课题:提供一种氮化物单晶的制造方法,该氮化物单晶的制造方法能够通过提高生长速度来提高原料利用效率,并且能够有效地制造导电性优异,且不会污染不必要的杂质的氮化物晶体。溶液:周期表中第13族金属的氮化物多晶,其中孔体积标准中的平均孔径为8μm以上且50μm以下,并且进一步的孔体积为0.1将×10 -3 ml / g以上且0.1 ml / g以下作为原料填充到反应容器中,并生长周期表中的第13族金属的氮化物单晶。在反应容器中以超临界和/或亚临界状态存在溶剂的情况;版权所有:(C)2015,JPO&INPIT

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