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CRYSTAL ANALYZER, COMPOSITE CHARGED PARTICLE BEAM DEVICE AND CRYSTAL ANALYSIS METHOD

机译:晶体分析仪,复合带电粒子束装置及晶体分析方法

摘要

PROBLEM TO BE SOLVED: To obtain a three-dimensional crystal orientation mapping indicating a crystal orientation in a normal direction of each plane of a plurality of planes of the polyhedron of a sample on the basis of EBSP data of a cross section formed on the sample.;SOLUTION: A crystal analyzer comprises: a measurement data storage part 13 storing EBSP data measured at electron beam irradiation points on a plurality of cross sections formed on a sample 5 with a predetermined interval and substantially parallel to each other; crystal orientation database 14 storing crystal orientation information corresponding to the EBSP; and a map construction part 15 that reads crystal orientations in normal directions of a plurality of planes of a polyhedron image obtained by arranging the plurality of cross sections on the basis of the interval, from the crystal orientation database 14 on the basis of EBSP data stored in the measurement data storage part 13, and constructs a three-dimensional crystal orientation map including the distribution of the crystal orientation in each normal direction of the plurality of planes.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:基于样品上形成的截面的EBSP数据,获得表示样品多面体的多个平面的每个平面的法线方向上的晶体取向的三维晶体取向映射解决方案:一种晶体分析仪,包括:测量数据存储部分13,其以预定的间隔并且基本彼此平行地存储在形成于样品5上的多个横截面上的电子束辐照点处测量的EBSP数据;以及晶体取向数据库14存储与EBSP对应的晶体取向信息。地图构造部15,根据存储的EBSP数据,从晶体取向数据库14中读取根据间隔配置多个截面而得到的多面体图像的多个平面的法线方向的晶体取向。在测量数据存储部分13中,构造一个三维晶体取向图,包括在多个平面的每个法线方向上的晶体取向分布。COPYRIGHT:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2014059230A

    专利类型

  • 公开/公告日2014-04-03

    原文格式PDF

  • 申请/专利权人 HITACHI HIGH-TECH SCIENCE CORP;

    申请/专利号JP20120204612

  • 发明设计人 FUJII TOSHIAKI;MITSU KIN;

    申请日2012-09-18

  • 分类号G01N23/225;

  • 国家 JP

  • 入库时间 2022-08-21 16:18:01

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