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Silicon-on-insulator structure having a high resistivity region in a handle wafer and method of manufacturing such a structure
Silicon-on-insulator structure having a high resistivity region in a handle wafer and method of manufacturing such a structure
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机译:在处理晶片中具有高电阻率区域的绝缘体上硅结构及其制造方法
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摘要
Silicon on insulator structures having a high resistivity region in the handle wafer of the silicon on insulator structure are disclosed. Methods for producing such silicon on insulator structures are also provided. Exemplary methods involve creating a non-uniform thermal donor profile and/or modifying the dopant profile of the handle wafer to create a new resistivity profile in the handle wafer. Methods may involve one or more SOI manufacturing steps or electronic device (e.g., RF device) manufacturing steps.
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