BACKSIDE IRRADIATION IMAGE SENSOR DEVICE INTEGRATED IN LENGTHWISE DIRECTION

摘要

PROBLEM TO BE SOLVED: To provide a backside irradiation image sensor device integrated in the lengthwise direction.SOLUTION: A backside irradiation image sensor includes a photodiode and a first transistor located in a first chip and the first transistor is electrically coupled to the photodiode. Furthermore, the backside irradiation image sensor includes a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, the second chip is laminated with the first chip, and the third chip is laminated with the second chip. The logic circuit, the second transistor, and the first transistor are coupled to each other through a plurality of bonding pads and a penetration via.