It is the manner which is removed from the surface of the silicon carbide formative which is used the silicon carbide crystalline structure which receives the damage with chemical processing null

摘要

PROBLEM TO BE SOLVED: To provide a method of removing damaged silicon carbide crystalline structure from the surface of a silicon carbide component.;SOLUTION: The method comprises at least two liquid chemical treatment processes, where one treatment converts silicon carbide to silicon oxide, and another treatment removes silicon oxide. The liquid chemical treatments are typically carried out at a temperature below about 100C. The time period required to carry out the method is generally less than about 100 hours.;COPYRIGHT: (C)2009,JPO&INPIT