CMOS device with a MOS transistor having a recessed drain and source regions as well as non-conformal metal suicide region

摘要

In extremely variables reduced semiconductor components, an asymmetrical transistor configuration on the basis of an inclined implantation processes, in the case of a larger paint height and / or larger angles of inclination during an inclined implantation processes are arranged, in that an asymmetrical mask means is provided for masked transistor elements. For this purpose, the implantation mask by a suitable amount is moved in order to so that the total blocking effect for the masked transistors to be increased, while a shielding effect of the implantation masks for the non-masked transistors is reduced. The displacement of the implantation masks can be accomplished, in that the automatic adjustment, the procedure on the basis of a "displaced" desired value is carried out or formed by the photolithography mask is provided an asymmetrical.