首页> 外国专利> Oxide semiconductor electrode and manufacturing method thereof, transparent conductive substrate and manufacturing method thereof, dye-sensitized solar cell, dye-sensitized solar cell module

Oxide semiconductor electrode and manufacturing method thereof, transparent conductive substrate and manufacturing method thereof, dye-sensitized solar cell, dye-sensitized solar cell module

机译:氧化物半导体电极及其制造方法,透明导电性基板及其制造方法,染料敏化太阳能电池,染料敏化太阳能电池模块

摘要

PPROBLEM TO BE SOLVED: To provide an oxide semiconductor electrode capable of making a dye-sensitized solar cell without fear of fall of durability due to local heating of a conductive layer, even in case one is used for improving photoelectric conversion efficiency, and with excellent photoelectric conversion efficiency by dint of a uniform porous layer without cracks. PSOLUTION: The oxide semiconductor electrode is provided with a first base material, a first electrode layer consisting of a conductive layer and metal oxide laminated in random order in contact with each other on the first base material, and a porous layer formed on the first electrode layer and the conductive layer containing metal oxide semiconductor fine particles, of which, the conductive layer is formed in a pattern with continued polygons with at least one internal angle obtuse. PCOPYRIGHT: (C)2011,JPO&INPIT
机译:

要解决的问题:提供一种即使在为了提高光电转换效率而使用的情况下,也能够制造不会因导电层的局部加热而导致耐久性下降的染料敏化太阳能电池的氧化物半导体电极,并且,由于均匀且没有裂纹,因此具有优异的光电转换效率。

解决方案:氧化物半导体电极具有第一基底材料,由导电层和金属氧化物组成的第一电极层,该第一电极层在第一基底材料上彼此无序地彼此接触地层叠,并且在其上形成有多孔层。第一电极层和包含金属氧化物半导体微粒的导电层,其中,导电层形成为具有至少一个内角为钝角的连续多边形的图案。

版权:(C)2011,日本特许厅&INPIT

著录项

  • 公开/公告号JP5617467B2

    专利类型

  • 公开/公告日2014-11-05

    原文格式PDF

  • 申请/专利权人 大日本印刷株式会社;

    申请/专利号JP20100208055

  • 发明设计人 佐々木 美帆;

    申请日2010-09-16

  • 分类号H01G9/20;

  • 国家 JP

  • 入库时间 2022-08-21 16:13:48

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