Being the nitriding gallium monocrystal baseplate of the Hexagonal system which is used in order to grow the production methodological null III family

摘要

PROBLEM TO BE SOLVED: To provide a base substrate where a group III nitride crystal having a large area and a thick film can be grown while inhibiting the generation of cracks.;SOLUTION: A single crystal substrate using for growing a group III nitride crystal satisfies formula (1) denoted by -40Z2/Z1-1 (wherein, Z1 (μm) is the amount of the warpage of a physical shape in the growing surface of the single crystal substrate and Z2 (μm) is the amount of warpage calculated from the radius of the curvature of a crystallographic-plane shape in the growing surface of the single crystal substrate).;COPYRIGHT: (C)2013,JPO&INPIT