Raytheon Title III Gallium Nitride (GaN) Production Program

摘要

This 3+ year Title III program fabricated over two hundred fifty (250) 100 mm GaN SiC wafers to establish a domestic, economically viable production capacity for 28 Volt Monolithic Microwave Integrate Circuits (MMICs) and achieved the primary program goal with the demonstration and validation of Manufacturing Readiness Level (MRL) 8, qualifying this process for insertion into DoD production systems.