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SYSTEM AND METHOD FOR MODELING EPITAXIAL GROWTH IN A 3-D VIRTUAL FABRICATION ENVIRONMENT
SYSTEM AND METHOD FOR MODELING EPITAXIAL GROWTH IN A 3-D VIRTUAL FABRICATION ENVIRONMENT
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机译:在3-D虚拟制造环境中模拟表观增长的系统和方法
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摘要
A virtual fabrication environment for semiconductor device structure development is discussed that enables the use of a selective epitaxy process to virtually model epitaxial growth of a crystalline material layer. The epitaxial growth occurs on a crystalline substrate surface of a virtually fabricated model device structure. A surface growth rate may be defined over possible 3D surface orientations of the virtually fabricated device structure by modeling the growth rates of the three major families of crystal planes. Growth rates along neighboring non-crystalline material may also be modeled.
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