首页>
外国专利>
CODING ARCHITECTURE FOR MULTI-LEVEL NAND FLASH MEMORY WITH STUCK CELLS
CODING ARCHITECTURE FOR MULTI-LEVEL NAND FLASH MEMORY WITH STUCK CELLS
展开▼
机译:具有粘滞存储单元的多级NAND闪存的编码架构
展开▼
页面导航
摘要
著录项
相似文献
摘要
Encoded least significant bit (LSB) values are generated for a cell based at least in part on a readback value for the cell. The encoded LSB values is decoded in order to obtain one or more decoded LSB values. Encoded most significant bit (MSB) values are generated for the cell based at least in part on (1) the readback value for the cell and (2) the decoded LSB values. The encoded MSB values are decoded in order to obtain one or more decoded MSB values, wherein the bit positions of the decoded LSB values do not overlap with the bit positions of the decoded MSB values.
展开▼