SEMICONDUCTOR DEVICE COMPENSATING FOR NEGATIVE BIAS TEMPERATURE INSTABILITY EFFECTS AND RELATED METHODS OF OPERATION

摘要

A semiconductor device comprises a metal oxide semiconductor (MOS) transistor circuit configured to receive a body bias voltage, and a negative bias temperature instability compensation (NBTIC) circuit configured to measure a negative bias temperature instability level on the MOS transistor circuit using an operating timing variation measuring unit and to adaptively compensate for a bias according to the measured value.