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SEMICONDUCTOR DEVICE WITH A SILICON DIOXIDE GATE INSULATION LAYER IMPLANTED WITH A RARE EARTH ELEMENT AND METHODS OF MAKING SUCH A DEVICE
SEMICONDUCTOR DEVICE WITH A SILICON DIOXIDE GATE INSULATION LAYER IMPLANTED WITH A RARE EARTH ELEMENT AND METHODS OF MAKING SUCH A DEVICE
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机译:具有掺杂有稀土元素的二氧化硅栅绝缘层的半导体器件及其制造方法
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摘要
One illustrative method disclosed herein includes forming a gate insulation layer on a semiconducting substrate, performing an ion implantation process to implant a rare earth element into the gate insulation layer, and forming a silicon-containing gate electrode above the gate insulation layer comprising the implanted rare earth element. One illustrative device disclosed herein includes a gate insulation layer positioned on a semiconducting substrate, wherein the gate insulation layer is comprised of silicon dioxide and a rare earth element, and a silicon-containing gate electrode positioned on the gate insulation layer.
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