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Method of fabricating cigs solar cells with high band gap by sequential processing
Method of fabricating cigs solar cells with high band gap by sequential processing
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机译:通过顺序加工制造具有高带隙的igs太阳能电池的方法
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摘要
A method for forming TFPV absorber layer. A first layer including In is formed on a substrate. The first layer is partially or fully selenized to form a layer that includes InxSey. A second layer is formed on the partially or fully selenized first layer. The second layer may include multiple layers of Cu and Cu—Ga or may be a single layer of Cu—Ga. The Cu—Ga layers can be deposited from sputtering targets wherein the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. The first and second layers are then fully selenized to form a CIGS layer.
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机译:一种形成TFPV吸收层的方法。在基板上形成包括In的第一层。第一层被部分或全部硒化以形成包括In x Sub> Se y Sub>的层。在部分或完全硒化的第一层上形成第二层。第二层可以包括Cu和Cu-Ga的多层,或者可以是Cu-Ga的单层。可以从溅射靶沉积Cu-Ga层,其中一个或多个靶中的Ga浓度在约25原子%至约66原子%之间。沉积可以在间歇或在线沉积系统中进行。然后将第一层和第二层完全硒化以形成CIGS层。
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