首页>
外国专利>
SEMICONDUCTOR DEVICE USING 2-DIMENSIONAL ELECTRON GAS AND 2-DIMENSIONAL HOLE GAS AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE USING 2-DIMENSIONAL ELECTRON GAS AND 2-DIMENSIONAL HOLE GAS AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
展开▼
机译:使用二维电子气体和二维孔气体的半导体装置及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on the second compound semiconductor layer between the first and second electrodes, a first gate electrode on the third compound semiconductor layer, a fourth compound semiconductor layer having a smaller thickness than the third compound semiconductor layer on a portion of the second compound semiconductor layer between the second and third electrodes, and a second gate electrode on the fourth compound semiconductor layer. The first compound semiconductor layer between the second and third electrodes includes a 2-dimensional electron gas (2DEG) and the third compound semiconductor layer includes a 2-dimensional hole gas (2DHG).
展开▼