CONTROLLING LATERAL TWO-DIMENSIONAL ELECTRON HOLE GAS HEMT IN TYPE III NITRIDE DEVICES USING ION IMPLANTATION THROUGH GRAY SCALE MASK

摘要

A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.