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Semiconductor device including a transistor with gate in a trench and a doped region under the trench to modify the threshold voltage
Semiconductor device including a transistor with gate in a trench and a doped region under the trench to modify the threshold voltage
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机译:半导体器件包括在沟槽中具有栅极并且在沟槽之下具有掺杂区以修改阈值电压的晶体管
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摘要
A semiconductor device includes a transistor with a substrate on which source and drain regions, both of a first conductivity type, and a channel region of a second conductivity type between the source and drain are formed, and a gate electrode formed in the channel region to bury a trench formed so the depth thereof changes intermittently in the width direction of the gate. In the channel region, each on a surface of the substrate and in a bottom portion of the trench, there are formed a second high-concentration region and a first high-concentration region, and the dopant concentration of the second conductivity type is higher than the dopant concentration of the second conductivity type in portions sideward from the trench. The dopant concentration of the second conductivity type in the first high-concentration region is higher than the dopant concentration of the second conductivity type in the second high-concentration region.
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