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METHOD OF FABRICATING A NEUTRON DETECTOR SUCH AS A MICROSTRUCTURED SEMICONDUCTOR NEUTRON DETECTOR

机译:制造诸如中微结构半导体中子探测器的方法

摘要

A method of making a neutron detector such as a microstructured semiconductor neutron detector is provided. The method includes the step of providing a particle-detecting substrate having a surface and a plurality of cavities extending into the substrate from the surface. The method also includes filling the plurality of cavities with a neutron-responsive material. The step of filling including the step of centrifuging nanoparticles of the neutron-responsive material with the substrate for a time and a rotational velocity sufficient to backfill the cavities with the nanoparticles. The material is responsive to neutrons absorbed, thereby, for releasing ionizing radiation reaction products
机译:提供了一种制造中子探测器例如微结构半导体中子探测器的方法。该方法包括提供具有表面和从该表面延伸到该衬底中的多个腔的颗粒检测衬底的步骤。该方法还包括用中子响应性材料填充多个腔。填充的步骤包括将中子响应性材料的纳米颗粒与基板离心一定时间和足够的速度以用纳米颗粒回填空腔的步骤。该材料对吸收的中子有反应,从而释放出电离辐射反应产物

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