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Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
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机译:基于外延晶体硅薄膜的异质结太阳能电池在冶金硅衬底上的设计
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摘要
One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
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