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Semiconductor device with bottom gate organic thin-film transistor, and display device and electronic equipment with same
Semiconductor device with bottom gate organic thin-film transistor, and display device and electronic equipment with same
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机译:具有底栅有机薄膜晶体管的半导体装置,显示装置以及具有该装置的电子设备
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摘要
A semiconductor device includes first layer wiring including a gate electrode mounted on a substrate; a gate insulating film having an opening that exposes part of the first layer wiring and covering the entire surface of the substrate including the gate electrode; second layer wiring including a source electrode and a drain electrode mounted on the gate insulating film; an insulating partition layer having a first opening that exposes an edge between the source electrode and the drain electrode and a part of the gate insulating film between the source electrode and the drain electrode and a second opening that is aligned with the opening formed in the gate insulating film; and an organic semiconductor layer disposed across the source electrode and the drain electrode at the bottom surface of the first opening formed in the partition layer.
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