Bottom gate organic thin-film transistors fabricated by ultraviolet transfer embossing with improved device performance

摘要

Ultraviolet transfer embossing is optimized to fabricate bottom gate organic thin-film transistors (OTFTs) on flexible plastic substrates, achieving significant improved device performance (μ= 0.01-0.02cm~2/Vs; on/off ratio = 10~4) compared with the top gate OTFTs made previously by the same method (μ = 0.001-0.002 cm~2/Vs; on/off ratio = 10~2). The performance improvement can be ascribed to the reduced roughness of the dielectric-semiconductor interface (R_(rms) = 0.852 nm) and thermally cross-linked PVP dielectric which leads to reduced gate leakage current and transistor off current in the bottom-gated configuration. This technique brings an alternative great opportunity to the high-volume production of economic printable large-area OTFT-based flexible electronics and sensors.