Detection and removal of self-aligned double patterning artifacts

摘要

Mask design techniques for detection and removal of undesirable artifacts in SADP processes using multiple patterns are disclosed. Artifacts or spurs result from lithographic and chemical processing of semiconducting wafers. The spurs are undesirable because they can cause unwanted connections or act as electrical antennas. Spurs are detected using rule-based techniques and reduced by modifying lithographic masks. The severity of the detected spurs is determined, again using rule-based techniques. The effects of detected spurs can be reduced by modifying the decomposition of the drawn patterns into the two masks used for lithography. Mandrel masks are modified by add dummy mandrel material, and trim masks are modified by removing trim material. The resulting multi-pattern arrangement is used to fabricate the critical design elements that make up the semiconductor wafers.