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Workfunction metal stacks for a final metal gate
Workfunction metal stacks for a final metal gate
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机译:最终金属浇口的功函数金属桩
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摘要
Transistor devices are formed with a pMOS and an nMOS workfunction stack of substantially equal thickness after gate patterning. Embodiments include forming n-type and p-type areas in a substrate, forming a pMOS workfunction metal stack layer on both areas, forming a hardmask layer on the pMOS workfunction metal stack layer on the n-type area, removing the pMOS workfunction metal stack layer from the p-type area, forming an nMOS workfunction metal stack layer on the p-type area and on the hardmask layer, and removing the nMOS workfunction metal stack layer from the hardmask layer.
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