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Through silicon via-based oscillator wafer-level-package structure and method for fabricating the same

机译:基于硅通孔的振荡器晶片级封装结构及其制造方法

摘要

The present invention provides a TSV-based oscillator WLP structure and a method for fabricating the same. The method of the present invention comprises steps: providing a silicon base having an oscillator unit disposed thereon; forming on the silicon base at least one package ring surrounding the oscillator unit; and disposing a silicon cap on the package ring to envelop the oscillator unit. The present invention adopts a cap and a base, which are made of the same material, to effectively overcome the problem of thermal stress occurring in a conventional sandwich package structure. Further, the present invention elaborately designs the wiring on the lower surface of the base to reduce the package size and decrease consumption of noble metals.
机译:本发明提供了基于TSV的振荡器WLP结构及其制造方法。本发明的方法包括以下步骤:提供其上设置有振荡器单元的硅基底;在硅基底上形成至少一个包围振荡器单元的封装环;并在封装环上放置一个硅盖以包裹振荡器单元。本发明采用由相同材料制成的盖和基座,以有效地克服传统的三明治包装结构中出现的热应力问题。此外,本发明精心设计了在基底的下表面上的布线,以减小封装尺寸并减少贵金属的消耗。

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