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Apparatus comprising a first transistor including a channel in a fin and a second transistor including a channel in a fin
Apparatus comprising a first transistor including a channel in a fin and a second transistor including a channel in a fin
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机译:一种设备,其包括在鳍中包括沟道的第一晶体管和在鳍中包括沟道的第二晶体管
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摘要
One or more embodiments relate to an apparatus comprising: a first transistor including a channel in a fin; and a second transistor including a channel in a fin, the channel of the first transistor being doped with a first dopant of a first polarity and counter-doped with a second dopant of a second polarity opposite to the first polarity, a concentration of the first dopant being approximately equal to a concentration of the second dopant, wherein the first transistor and the second transistor are of a same conductivity type.
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