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Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same
Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same
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机译:包括具有突出有源部分的多沟道鳍式场效应晶体管的半导体器件及其制造方法
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摘要
In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region, a portion of the semiconductor substrate in the cell region and in the peripheral circuit region including an isolation region defining an active region, a portion of the active region protruding above an upper surface of the isolation region to define at least two active channels, a gate dielectric layer formed over the active region of the semiconductor substrate including the at least two protruding active channels, a gate electrode formed over the gate dielectric layer and the isolation region of the semiconductor substrate, and a source/drain region formed in the active region of the semiconductor substrate on either side of the gate electrode.
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