Memory devices and programming methods that program a memory cell with a data value, read the data value from the memory cell and reprogram the memory cell with the read data value

摘要

Memory devices and programming methods are disclosed. In an embodiment of one such method, a memory cell is programmed to at least a first threshold voltage. After programming the memory cell to at least the first threshold voltage, the memory cell is read, using a read voltage that is less than the first threshold voltage. After reading the memory cell, the memory cell is programmed to at least a second threshold voltage that is greater than the first threshold voltage.