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CONNECTING MEMORY CELLS TO A DATA LINE SEQUENTIALLY WHILE APPLYING A READ VOLTAGE TO THE MEMORY CELLS AND PROGRAMMING THE READ DATA TO A SINGLE MEMORY CELL
CONNECTING MEMORY CELLS TO A DATA LINE SEQUENTIALLY WHILE APPLYING A READ VOLTAGE TO THE MEMORY CELLS AND PROGRAMMING THE READ DATA TO A SINGLE MEMORY CELL
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机译:在将读取电压应用于存储单元并将读取数据编程到单个存储单元时,依次将存储单元连接到数据线
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摘要
Programming methods include programming first and second data in first and second memory cells, reading the first data from the first memory cell by applying a read voltage to an access line connected to the first and second memory cells while the first memory cell is electrically connected to a data line and while the second memory cell is electrically disconnected from the data line, reading the second data from the second memory cell by electrically disconnecting the first memory cell from the data line and electrically connecting the second memory cell to the data line while the read voltage remains applied to the access line, and programming the read first data and the read second data in a single memory cell connected to a different access line.
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