首页> 外国专利> CONNECTING MEMORY CELLS TO A DATA LINE SEQUENTIALLY WHILE APPLYING A READ VOLTAGE TO THE MEMORY CELLS AND PROGRAMMING THE READ DATA TO A SINGLE MEMORY CELL

CONNECTING MEMORY CELLS TO A DATA LINE SEQUENTIALLY WHILE APPLYING A READ VOLTAGE TO THE MEMORY CELLS AND PROGRAMMING THE READ DATA TO A SINGLE MEMORY CELL

机译:在将读取电压应用于存储单元并将读取数据编程到单个存储单元时,依次将存储单元连接到数据线

摘要

Programming methods include programming first and second data in first and second memory cells, reading the first data from the first memory cell by applying a read voltage to an access line connected to the first and second memory cells while the first memory cell is electrically connected to a data line and while the second memory cell is electrically disconnected from the data line, reading the second data from the second memory cell by electrically disconnecting the first memory cell from the data line and electrically connecting the second memory cell to the data line while the read voltage remains applied to the access line, and programming the read first data and the read second data in a single memory cell connected to a different access line.
机译:编程方法包括:对第一和第二存储单元中的第一和第二数据进行编程;在第一存储单元电连接到第一和第二存储单元的同时,通过向与第一和第二存储单元连接的访问​​线施加读取电压,从第一存储单元读取第一数据。当第二存储单元与数据线电断开时,通过将第一存储单元与数据线电断开并将第二存储单元电连接至数据线,从第二存储单元读取第二数据。读取电压保持施加到访问线,并在连接到不同访问线的单个存储单元中对读取的第一数据和读取的第二数据进行编程。

著录项

  • 公开/公告号US2019035472A1

    专利类型

  • 公开/公告日2019-01-31

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201816148405

  • 发明设计人 QIANG TANG;RAMIN GHODSI;TORU TANZAWA;

    申请日2018-10-01

  • 分类号G11C16/10;G11C16/04;G11C16/34;G11C16/26;G11C11/56;G11C16/08;G11C16/32;G11C16/12;

  • 国家 US

  • 入库时间 2022-08-21 12:04:49

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