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Sacrificial spacer approach for differential source/drain implantation spacers in transistors comprising a high-k metal gate electrode structure
Sacrificial spacer approach for differential source/drain implantation spacers in transistors comprising a high-k metal gate electrode structure
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机译:用于包括高k金属栅电极结构的晶体管中的差分源极/漏极注入隔离物的牺牲隔离物方法
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摘要
In complex semiconductor devices, the profiling of the deep drain and source regions may be accomplished individually for N-channel transistors and P-channel transistors without requiring any additional process steps by using a sacrificial spacer element as an etch mask and as an implantation mask for incorporating the drain and source dopant species for deep drain and source areas for one type of transistor. On the other hand, the usual main spacer may be used for the incorporation of the deep drain and source regions of the other type of transistor.
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