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Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structures
Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structures
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机译:使用石墨烯限制互连结构中的铜表面氧化,扩散和电迁移
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摘要
A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.
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