High-voltage semiconductor device with lateral series capacitive structure

摘要

A semiconductor device includes a semiconductor substrate, a source region extending along a top surface of the semiconductor substrate, a drain region extending along the top surface of the semiconductor substrate, and a field shaping region disposed within the semiconductor substrate between the source region and the drain region. A cross-section of the semiconductor substrate extending from the source region to the drain region through the field shaping region includes an insulating region. The semiconductor device also includes an active region disposed within the semiconductor substrate between the source region and the drain region. The active region is disposed adjacent to the field shaping region in a direction perpendicular to the cross-section of the semiconductor substrate extending from the source region to the drain region through the field shaping region.