Process for improving design-limited yield by localizing potential faults from production test data

摘要

A process for improving design-limited yield by collecting test fail data, converting to electrical faults, and localizing to physical area on semiconductor die. The steps of identifying an area on a wafer containing a fault to enable the analysis of specific defects, accumulating data suitable for yield monitoring analysis based on pattern test failures logged on scan cells in scan chains on automatic test equipment, and translating scan cell and scan chain failure reports to geometric locations of electrical structures on wafers.