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Gas cluster ion beam etch profile control using beam divergence
Gas cluster ion beam etch profile control using beam divergence
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机译:使用束发散的气体团簇离子束蚀刻轮廓控制
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摘要
A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB.
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