首页> 外国专利> ENHANCED HIGH ASPECT RATIO ETCH PERFORMANCE USING ACCELERATED NEUTRAL BEAMS DERIVED FROM GAS-CLUSTER ION BEAMS

ENHANCED HIGH ASPECT RATIO ETCH PERFORMANCE USING ACCELERATED NEUTRAL BEAMS DERIVED FROM GAS-CLUSTER ION BEAMS

机译:源自气体团簇离子束的加速中性束增强了高纵横比刻蚀性能

摘要

A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.
机译:一种处理沟槽,通孔,孔,凹槽,空隙或其他特征的方法,该特征将深度延伸到基板中直至底部或底部,并具有高纵横比的开口(从开口到底部或底部的深度除以最小通过用来自加速气体团簇离子束的加速中性束进行辐照来在开口的底部或底部加工材料。

著录项

  • 公开/公告号US2018292745A1

    专利类型

  • 公开/公告日2018-10-11

    原文格式PDF

  • 申请/专利权人 EXOGENESIS CORPORATION;

    申请/专利号US201816008573

  • 申请日2018-06-14

  • 分类号G03F1/80;H01L21/265;G03F1/82;H01J37/05;H01J37/147;H01J37/317;H01L21/02;H05H3/02;H01L21/311;B24B37/04;H01L29/36;

  • 国家 US

  • 入库时间 2022-08-21 13:03:03

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