...
机译:AlGaN / GaN HEMT具有无损中性束刻蚀凹槽,适用于高性能毫米波应用
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Institute of Fluid Science, Tohoku University, Sendai, Japan;
Institute of Photonic System, National Chiao Tung University, Hsinchu, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;
International College of Semiconductor Technology, National Chiao Tung University, Hsinchu, Taiwan;
Institute of Fluid Science, Tohoku University, Sendai, Japan;
Department of Materials Science and Engineering and the Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan;
HEMTs; MODFETs; Logic gates; Gallium nitride; Etching; Aluminum gallium nitride; Wide band gap semiconductors;
机译:适用于高性能毫米波应用的栅极嵌入式AlGaN-GaN HEMT
机译:采用过渡隐栅技术制造的毫米波AlGaN / GaN HEMT,用于高增益和高线性度应用
机译:具有高增益和高线性应用的过渡凹槽技术制造的毫米波AlGaN / GaN HEMT
机译:使用无损中性束刻蚀的栅极凹槽,具有低阈值电压滞后的增强型AlGaN / GaN MIS-HEMT
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明